2012.09-2016.09            加州大学河滨分校                 电子工程	                      博士
2009.09-2012.06            中科院微电子所            微电子与固体电子学                 硕士
2005.08-2009.06            中国科学技术大学           应用物理-微电子	       本科

主要研究方向为新型半导体存储器件与制备、三维闪存可靠性研究、智能存储以及新型存算一体的技术研发。主要应用包括基于新材料新原理的存储级内存（SCM）器件的设计与制备、三维架构DRAM、闪存器件与芯片、面向AI加速的智能存储系统集成、存算一体的器件及架构设计等

2024.03-至今                  中国科学技术大学              			   特任教授
2019.06-2024.02            美国美光公司（Micron Corporation）　       首席SSD系统架构师
2016.10-2019.06            美国西部数据公司（Western Digital）　            资深器件工程师

1.Zhongguang Xu, Hao Tian, Alireza Khanaki, Renjing Zheng, Mohammad Suja, Jianlin Liu, “Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy”, Sci. Reps., 2017, 7, 43100(1-7). 52
2. Zhongguang Xu, Alireza Khanaki, Hao Tian, Renjing Zheng, Mohammad Suja, Jian-Guo Zheng, Jianlin Liu, “Direct growth of graphene-hexagonal boron nitride structures on cobalt foil by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett, 2016, 109, 043110(1-5). 31
3.Zhongguang Xu, Renjing Zheng, Alireza Khanaki, Zheng Zuo, Jianlin Liu “Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett, 2015, 107, 213103(1-4). 34
4. Zheng Zuo*, Zhongguang Xu*, Renjing Zheng*, Alireza Khanaki, Jian-Guo Zheng, Jianlin Liu, “In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy”, Sci. Reps., 2015, 5, 14760(1-6).* 共一作. 89
5.Zhongguang Xu, Chenxin Zhu, Zongliang Huo, Shengjie Zhao, Ming Liu, “Effects of high temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structure”, J. Phys. D: Appl. Phys., 2012, 45, 185103(1-5). 10
6.Hao Tian, Alireza Khanaki, Protik Das, Renjing Zheng, Zhenjun Cui, Yanwei He, Wenhao Shi, Zhongguang Xu, Roger Lake, Jianlin Liu “Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers”, Nano Lett.2018, 18, 3352-3361，30
7.Alireza Khanaki*, Zhongguang Xu*, Hao Tian, Renjing Zheng, Zheng Zuo, Jian-Guo Zheng, Jianlin Liu, “Self-assembled cubic boron nitride nanodots” Sci. Reps., 2017, 7, 4087(1-10).* 共一作. 10
8.Zhongguang Xu, Chenxin Zhu, Zongliang Huo, Yanxiang Cui, Yumei Wang, Fanghua Li, Ming Liu “Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix”, Appl. Phys. Lett, 2012, 100, 203509(1-4)，8
9.Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu, Shibing Long, Ming Liu, “Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-k trapping layer” Appl. Phys. Lett, 2010, 97, 253503 (1-3)，85
10.Zhongguang Xu, Zongliang Huo, Chenxin Zhu, Yanxiang Cui, Ming Wang, Zhiwei Zheng, Jing Liu, Yumei Wang, Fanghua Li, Ming Liu, “Performance-improved non-volatile memory with aluminium nanocrystals embedded in Al2O3 for high temperature applications”, J. Appl. Phys., 2011, 110, 104514(1-5)，8
专利
1.Zhongguang Xu，Nicola Ciocchini，Zhenlei Shen，Charles See Yeung Kwong，Murong Lang，Ugo Russo，Niccolo' Righetti，Partial block handling in a non-volatile memory device，美国，US20230360704A1， 2024-02-13
2.Zhongguang Xu, Murong Lang, Zhenming Zhou, Adapting an error recovery process in a memory sub-system，美国，US11763914B2, 2023-09-19
3.Zhongguang Xu, Murong Lang, Zhenming Zhou, Reliability health prediction by high-stress seasoning of memory devices，美国，US11238950B1, 2022-02-01
4.Zhongguang Xu, Murong Lang, Zhenming Zhou, Dynamic voltage setting optimization during lifetime of a memory device，美国，US20220012121A1, 2023-08-29
5.Zhongguang Xu，Tingjun Xie，Murong Lang，Zhenming Zhou，Adjusting read-level thresholds based on write-to-write delay，美国，US11742029B2，2023-08-29
6.Zhongguang Xu，Zhenlei Shen，Murong Lang，Performing select gate integrity checks to identify and invalidate defective blocks，美国，US20230187009A1，2023-12-26
7.Zhongguang Xu，Tingjun Xie，Murong Lang，Zhenming Zhou，Dynamic read-level thresholds in memory systems，美国，US20230043877A1，2023-09-19
8.Zhongguang Xu，Zhenlei Shen，Tingjun Xie，Seungjune Jeon，Murong Lang，Zhenming Zhou，Life time extension of memory device based on rating of individual memory units，美国，US11687248B2，2023-06-27
9.刘明，许中广，霍宗亮，谢常青，龙世兵，张满红，李冬梅，王琴，刘璟，复合存储器，中国，CN102651233B，2015-08-19
10.刘明，许中广，霍宗亮，张满红，谢常青，龙世兵，李冬梅，一种半导体存储器件，中国，CN102800358B，2015-09-09