2007.09-2012.06         中国科学院微电子研究所 微电子与固体电子学 博士

朱晨昕博士现任中国科学技术大学微电子学院特任教授、博士生导师。主要研究方向为新型半导体器件设计与制备、先进半导体存储器。主要应用包括柔性电子、可穿戴智能感知、智能存储等。发表高水平学术期刊30余篇，包括Nature Electronics, IEEE EDL, Science等，获授权多项国际、中国发明专利。主持或参与多项国家级省级科研项目、企业合作研究项目等。
培养基地研方向有：一、先进存储：主要研究方向为新型存储器芯片、适应AI的组合存储系统架构、存力加速等；二、汽车电子：主要研究方向为微波/毫米波收发前端芯片、射频通信SoC芯片、毫米波封装天线与阵列；三、集成电路共性设计平台：主要研究方向为存储类模拟系列IP、射频系列IP、车规级模拟系列IP和抗辐照模拟系列IP等。

2023.10 - 至今    中国科学技术大学 微电子学院 特任教授

2021.10-2023.10         美国因特尔公司 高级资深工程师

2018.12-2021.09         美国斯坦福大学 工程学院 研究员

2014.12-2018.11         美国斯坦福大学 电子工程系 博士后

2012.09-2014.11         南京大学 电子科学与工程学院 博士后

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 C. Zhu#, Z. Bao*. Skin-inspired Electronics for Emerging Display Technology, SID Symposium Digest of Technical Papers, 2021, 52(1). (Invited Paper).

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 A. Chortos#, C. Zhu, J. Y. Oh, X. Yan, I. Pochorovski, J. W.-F. To, N. Liu, U. Kraft, B. Murmann, Z. Bao*. Investigating limiting factors in stretchable all-carbon transistors for reliable stretchable electronics, ACS nano, 2017, 11(8): 7925-7937, 56.

 J. Xu#, S. Wang#, G. N. Wang, C. Zhu, S. Luo, L. Jin, X. Gu, S. Chen, V. R Feig, J. WF To, S. R.-Gagné, J. Park, B. C Schroeder, C. Lu, J. Y. Oh, Y. Wang, Y.-H. Kim, H. Yan, R. Sinclair, D. Zhou, G. Xue, B. Murmann, C. Linder, W. Cai, J. B-H Tok, J. W. Chung, Z. Bao*. Highly stretchable polymer semiconductor films through the nanoconfinement effect, Science, 2017, 355(6320): 59-64, 926.

 R. Yang#, C. Zhu#, J. Meng, Z. Huo, M. Cheng, D. Liu, W. Yang, D. Shi, M. Liu*, G. Zhang*. Isolated nanographene crystals for nano-floating gate in charge trap memory. Scientific reports, 2013, 3(1): 2126, 60.

 X. Li#, C. Zhu*, X. Zhu, Z. Xu, X. Zhuang, X. Ji, F. Yan*. Background limited ultraviolet photodetectors of solar-blind ultraviolet detection. Applied Physics Letters, 2013, 107(17), 171110.

 C. Zhu#, Z. Xu, Z. Huo, R. Yang, Zhu, Z. Zheng, Y. Cui, J. Liu, Y. Wang, D. Shi, G. Zhang, F. Li, M. Liu*. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy, Applied Physics Letters, 2011, 99(22), 223504.

 C. Zhu#, Z. Huo, Z. Xu, M. Zhang, Q. Wang, J. Liu, S. Long, M. Liu*. Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trap layer, Applied Physics Letters, 2010, 97(25), 253503. (Research Highlight).

 THREE DIMENSIONAL AND MULTI-VALUED NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF, WIPO, WO/2012/000442.