2018 巴塞罗那大学（University of Barcelona），博士

主要研究内容：

1. 晶圆级二维半导体材料、器件与集成电路
2. 新型薄膜晶体管设计、微纳制造与器件物理
3. 新型逻辑和存储器件与电路
4. 低功耗类脑计算神经形态器件与系统

2018-2019 以色列理工学院 （Technion），博士后研究员      
2019-2020 欧洲微电子研究中心（IMEC），博士后研究员      
2020-2022 欧洲微电子研究中心（IMEC），高级研究员      
2022-至今 中国科学技术大学微电子学院，特任教授

欧盟玛丽居里奖学金
IEEE电子器件学会优秀博士生奖
“福布斯欧洲30位30岁以下精英”
国家优秀自费留学生奖学金
巴塞罗那大学杰出博士毕业生奖
Park Systems公司AFM award

-Y. Shi*, B. Groven, Q. Smets, S. Sutar, S. Banerjee, H. Medina, X. Wu, C. Huyghebaert, S. Brems, D. Lin, P. Morin, M. Caymax, I. Asselberghs, I. Radu, Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening, IEDM, pp37.1.1-37.1.4 (2021).
-Y. Shi*, B. Groven, J. Serron, X. Wu, A. N. Mehta, A. Minj, S. Sergeant, H. Han, I. Asselberghs, D. Lin, S. Brems, C. Huyghebaert, P. Morin, I. Radu, M. Caymax, Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics, ACS Nano, 15, 9482-9494 (2021).
-Y. Shi, X. Liang, B. Yuan, V. Chen, H. Li, F. Hui, Z. Yu, F. Yuan, E. Pop, H.-S. P. Wong, M. Lanza, Electronic synapses made of layered two-dimensional materials, Nature Electronics, 1, 458-465 (2018).
-Y. Shi, T.-Y. Hsieh, C. Gimbert-Suriñach, M. A. Hoque, W. Cambarau, S. Narbey, E. Palomares, M. Lanza, A. Llobet, high solar-to-hydrogen conversion efficiency at pH 7 based on a PV-EC cell with an oligomeric molecular anode, ACS Applied Materials & Interface, 12, 55856-55864 (2020).
-Y. Shi, C. Pan, V. Chen, N. Raghavan, K. L. Pey, F. Puglisi, E. Pop, H.-S. P. Wong, M. Lanza, Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses, IEDM, pp. 5.4.1-5.4.4 (2017).
-Y. Shi, T. Han, C. Gimbert-Suriñach, X. Song, M. Lanza, A. Llobet, Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells, Journal of Materials Chemistry A, 5, 1996-2003 (2017).
-Y. Shi, C. Gimbert-Suriñach, T. Han, S. Berardi, M. Lanza, A. Llobet, CuO-functionalized silicon photoanodes for photoelectrochemical water splitting devices, ACS Applied Materials & Interfaces, 8, 686-702 (2016).
-Y. Shi, Y. Ji, H. Sun, F. Hui, J. Hu, Y. Wu, J. Fang, H. Lin, J. Wang, H. Duan, M. Lanza, Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles, Scientific Reports, 5, 11232 (2015).  
-Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker, M. Lanza, In situ demonstration of the link between mechanical strength and resistive switching in conductive filament based non-volatile memories, Advanced Electronic Materials, 1, 1400058 (2015).
-Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker, M. Lanza, New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength, International Symposium on the physical and Failure Analysis of Integrated Circuits (IPFA), DOI:  10.1109/IPFA.2015.7224435 (2015).
-Y. Shi, Y. Ji, F. Hui, M. Lanza, On the ageing mechanisms of graphene-on-metal electrodes, IEEE Spanish Conference on Electron Devices (CDE), DOI: 10.1109/CDE.2015.7087446 (2015).
-Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M. Lanza, Elucidating the origin of resistive switching in ultrathin hafnium oxides through high spatial resolution tools, ECS Transactions, 64, 19-28 (2014).
-Y. Shi, Y. Ji, F. Hui, H.-H. Wu, M. Lanza, Ageing mechanisms and reliability of graphene-based electrodes, Nano Research, 7, 1820-1831 (2014).
-T. Han, Y. Shi*, Z. Yu, B. Shin, M. Lanza, Potassium Hydroxide Mixed with Lithium Hydroxide: An Advanced Electrolyte for Oxygen Evolution Reaction, Solar RRL, 3, 1900195 (2019).
-X. Wu, D. Cott, Z. Lin, Y. Shi, B. Groven, P. Morin, D. Verreck, Q. Smets, H. Medina, S. Sutar, I.  Asselberghs, I. Radu, D. Lin, Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg, IEDM, PP.7.4.1-7.4.4 (2021).
-Q. Smets, D. Verreck, Y. Shi, G. Arutchelvan, B. Groven, X. Wu, S. Sutar, S. Banerjee, A. N. Mehta, D. Lin, I. Asselberghs, I. Radu, Sources of variability in scaled MoS2 FETs, IEDM, pp3.1.1-3.1.4 (2020).
-S. Chen, M. R. Mahmoodi, Y. Shi, C. Mahata, B. Yuan, X. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, M.Lanza, Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks, Nature Electronics, 3, 638-645 (2020).