2013 安徽师范大学，学士
2015 罗维拉-威尔吉利大学（University of Rovira I Virgili）, 硕士
2018 巴塞罗那大学（University of Barcelona），博士
2016-2017 斯坦福大学（Stanford University），博士交流生  

当前的计算机芯片算力不仅受限于摩尔定律，也受限于存算分离的冯诺依曼结构。本课题组用在原子层厚度能保持良好载流子输运能力的二维半导体来研发面向未来集成电路的先进逻辑器件和低功耗的类脑计算硬件。本课题组研发高质量单层二维半导体的大面积生长，器件新结构设计，仿真和工艺优化，研制高性能低功耗短沟道晶体管以及器件差异性和可靠性研究，并实现简单CMOS逻辑电路的验证；同时也会开发基于新型存储器件的类脑计算硬件，主要包括用于神经网络计算中的人工神经元和突触。

2018-2019 以色列理工学院 （Technion），博士后研究员      
2019-2020 欧洲微电子研究中心（IMEC），博士后研究员      
2020-2022 欧洲微电子研究中心（IMEC），研究员      
2022-至今 中国科学技术大学微电子学院，特任教授

2018年IEEE电子器件学会优秀博士生奖
2018年国家优秀自费留学生奖学金
2018-2019年度巴塞罗那大学杰出博士毕业生奖
2020年欧盟玛丽居里奖学金
2020年Park Systems公司AFM award
2020年“福布斯欧洲30位30岁以下精英”

-Y. Shi*, B. Groven, Q. Smets, S. Sutar, S. Banerjee, H. Medina, X. Wu, C. Huyghebaert, S. Brems, D. Lin, P. Morin, M. Caymax, I. Asselberghs, I. Radu, Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening, IEDM, pp37.1.1-37.1.4 (2021).
-Y. Shi*, B. Groven, J. Serron, X. Wu, A. N. Mehta, A. Minj, S. Sergeant, H. Han, I. Asselberghs, D. Lin, S. Brems, C. Huyghebaert, P. Morin, I. Radu, M. Caymax, Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics, ACS Nano, 15, 9482-9494 (2021).
-Y. Shi, X. Liang, B. Yuan, V. Chen, H. Li, F. Hui, Z. Yu, F. Yuan, E. Pop, H.-S. P. Wong, M. Lanza, Electronic synapses made of layered two-dimensional materials, Nature Electronics, 1, 458-465 (2018).
-Y. Shi, T.-Y. Hsieh, C. Gimbert-Suriñach, M. A. Hoque, W. Cambarau, S. Narbey, E. Palomares, M. Lanza, A. Llobet, high solar-to-hydrogen conversion efficiency at pH 7 based on a PV-EC cell with an oligomeric molecular anode, ACS Applied Materials & Interface, 12, 55856-55864 (2020).
-Y. Shi, C. Pan, V. Chen, N. Raghavan, K. L. Pey, F. Puglisi, E. Pop, H.-S. P. Wong, M. Lanza, Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses, IEDM, pp. 5.4.1-5.4.4 (2017).
-Y. Shi, T. Han, C. Gimbert-Suriñach, X. Song, M. Lanza, A. Llobet, Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells, Journal of Materials Chemistry A, 5, 1996-2003 (2017).
-Y. Shi, C. Gimbert-Suriñach, T. Han, S. Berardi, M. Lanza, A. Llobet, CuO-functionalized silicon photoanodes for photoelectrochemical water splitting devices, ACS Applied Materials & Interfaces, 8, 686-702 (2016).
-Y. Shi, Y. Ji, H. Sun, F. Hui, J. Hu, Y. Wu, J. Fang, H. Lin, J. Wang, H. Duan, M. Lanza, Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles, Scientific Reports, 5, 11232 (2015).  
-Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker, M. Lanza, In situ demonstration of the link between mechanical strength and resistive switching in conductive filament based non-volatile memories, Advanced Electronic Materials, 1, 1400058 (2015).
-Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker, M. Lanza, New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength, International Symposium on the physical and Failure Analysis of Integrated Circuits (IPFA), DOI:  10.1109/IPFA.2015.7224435 (2015).
-Y. Shi, Y. Ji, F. Hui, M. Lanza, On the ageing mechanisms of graphene-on-metal electrodes, IEEE Spanish Conference on Electron Devices (CDE), DOI: 10.1109/CDE.2015.7087446 (2015).
-Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M. Lanza, Elucidating the origin of resistive switching in ultrathin hafnium oxides through high spatial resolution tools, ECS Transactions, 64, 19-28 (2014).
-Y. Shi, Y. Ji, F. Hui, H.-H. Wu, M. Lanza, Ageing mechanisms and reliability of graphene-based electrodes, Nano Research, 7, 1820-1831 (2014).
-T. Han, Y. Shi*, Z. Yu, B. Shin, M. Lanza, Potassium Hydroxide Mixed with Lithium Hydroxide: An Advanced Electrolyte for Oxygen Evolution Reaction, Solar RRL, 3, 1900195 (2019).
-X. Wu, D. Cott, Z. Lin, Y. Shi, B. Groven, P. Morin, D. Verreck, Q. Smets, H. Medina, S. Sutar, I.  Asselberghs, I. Radu, D. Lin, Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg, IEDM, PP.7.4.1-7.4.4 (2021).
-Q. Smets, D. Verreck, Y. Shi, G. Arutchelvan, B. Groven, X. Wu, S. Sutar, S. Banerjee, A. N. Mehta, D. Lin, I. Asselberghs, I. Radu, Sources of variability in scaled MoS2 FETs, IEDM, pp3.1.1-3.1.4 (2020).
-S. Chen, M. R. Mahmoodi, Y. Shi, C. Mahata, B. Yuan, X. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, M.Lanza, Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks, Nature Electronics, 3, 638-645 (2020).