2005年-2009年，中国科学技术大学，应用物理系学士(优秀毕业生)
2009年-2012年，中国科学院微电子所，微电子学与固体电子学硕士
2012年-2016年，美国加州大学河滨分校，电气工程学博士

新型存储器芯片、存储器可靠性、存算融合架构、AI硬件加速器和智能存储体系与架构

2016年-2019年, 美国西部数据公司，资深研发工程师；
2019年-2024年, 美国美光公司，主任系统架构师；
2024年-至今，中国科学技术大学微电子学院，特任教授

1. Z. He, X. Jin, Z. Xu*, F3: An FPGA-based Transformer Fine-tuning Accelerator with Flexible Floating Point Format, IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 15(2), 3555970(2025).
2. Z. He, Z. Cheng, Z. Xu* etc, Task-Level Parallelism for the Multifrontal Method in Tightly Coupled CPU-FPGA Architectures, 28th Annual IEEE High Performance Extreme Computing Virtual Conference(2024 Sep.).
3. P. Xu, P. Jiang, Y. Yang, X. Peng, W. Wei, T. Gong, Y. Wang, X. Long, J. Niu, Z. Xu etc, A Fully BEOL-compatible (300℃ Annealing) IGZO FeFET with Ultra Window (10V) and Prominent Endurance (10^9 ), 70 th IEEE International Electron Devices Meeting(2024 Dec.).
4. Y. Li, J. Cao , J. Yu, M. Liu, X. Zhang ,J. Chen, Q. Xu, X. Liu, J. Qiu , Y. Chen, M. Li, C. Zhu, Z. Xu, etc, Biomemristor Reservoir Computing With Multi-Value Mask for Improving Recognition Performance, IEEE Electron Device Letters, 45, 1657-1660(2024).
5. H. Tian, A. Khanaki, P. Das, R. Zheng, Z. Cui, Y. He, W. Shi, Z. Xu etc, Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-quality Large-area Two-dimensional Hexagonal Boron Nitride Layers, Nano Lett. 18, 3352(2018).
6. A. Khanaki, H. Tian, Z. Xu* etc, Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures, Nanotechnology, 3, 035602(2017).
7. Z. Xu* etc, Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy, Sci. Reps., 7, 43100(2017).
8. A. Khanaki, Z. Xu* etc, Self-assembled Cubic Boron Nitride Nanodots, Sci. Reps., 7, 4087 (2017). Co-first Author.
9. Z. Xu* etc, Direct growth of graphene-hexagonal boron nitride structures on cobalt foil by plasma-assisted molecular beam epitaxy, Appl. Phys. Lett, 109, 043110(2016).
10. Z. Zuo, Z. Xu* etc, In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy, Sci. Reps., 5, 14760(2015). Co-first Author.
11. Z. Xu* etc, Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy, Appl. Phys. Lett, 107, 213103(2015).
12. Z. Xu* etc, Effects of high temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structure, J. Phys. D: Appl. Phys., 45, 185103(2012).
13. Z. Xu* etc, Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix, Appl. Phys. Lett, 100, 203509(2012).
14. Z. Xu* etc, Performance-improved non-volatile memory with aluminium nanocrystals embedded in Al2O3 for high temperature applications, J. Appl. Phys., 110, 104514(2011).
15. Programming selection devices in non-volatile memory strings, US10734070B2
16. Adapting an error recovery process in a memory sub-system, US11763914B2
17. Managing execution of scrub operations in a memory sub-system, US11861178B2
18. Reliability health prediction by high-stress seasoning of memory devices, US11238950B1
19. Adaptive frequency control for high-speed memory devices, US011449377B2
20. Dynamic voltage setting optimization during lifetime of a memory device, US011740959B2
21. Selective data pattern write scrub for a memory system, WO2023034326A1
22. Rating memory devices based on performance metrics for various timing margin parameter settings, US20220137854A1
23. Adjusting read-level thresholds based on write-to-write delay, US20230050305A1
24. Managing an adaptive data path selection threshold for a memory sub-system, US20230207028A1
25. Dynamic read-level thresholds in memory systems, US20230043877A1
26. Temperature and inter-pulse delay factors for media management operations at a memory device, US11615008B2
27. Performing refresh operations of a memory device according to a dynamic refresh frequency, US20230043091A1
28. Partial block handing in a non-volatile memory device, US011901014B2
29. 一种多功能非易失存储器制备方法，CN102651233B
30. 一种多位存储器的制备方案，CN102693984B
31. 混合型非易失存储器，CN102779550B